STI34N65M5
RoHS 
RoHS compliant
RoHS compliantPackage TO-262-3 Full Pack, I2Pak
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 650V 28A I2PAK
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Buying Options
Total Price: USD $4.9
Unit Price: USD $4.9016
≥1 USD $4.9016
≥10 USD $3.882208
≥100 USD $3.327632
≥500 USD $2.957926
Inventory: 1090
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Full Pack, I2Pak
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series MDmesh? V
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Base Part Number STI34N
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 190W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 190W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 110m Ω @ 14A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2700pF @ 100V
Current - Continuous Drain (Id) @ 25°C 28A Tc
Gate Charge (Qg) (Max) @ Vgs 62.5nC @ 10V
Rise Time 8.7ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 7.5 ns
Continuous Drain Current (ID) 28A
JEDEC-95 Code TO-262AA
Drain-source On Resistance-Max 0.11Ohm
Drain to Source Breakdown Voltage 650V
Pulsed Drain Current-Max (IDM) 112A
Avalanche Energy Rating (Eas) 510 mJ
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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