STI32N65M5
RoHS 
RoHS compliant
RoHS compliantPackage TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET Nchannel 650 V 0.095 Ohm, 24 A, MDmesh
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Buying Options
Total Price: USD $5.82
Unit Price: USD $5.8168
≥1 USD $5.8168
≥10 USD $4.643936
≥100 USD $4.155184
≥500 USD $3.666291
Inventory: 1057
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tube
Series MDmesh? V
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE ENERGY RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STI32N
Pin Count 3
Number of Elements 1
Power Dissipation-Max 150W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 150W
Turn On Delay Time 53 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 119m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3320pF @ 100V
Current - Continuous Drain (Id) @ 25°C 24A Tc
Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V
Rise Time 12 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 53 ns
Continuous Drain Current (ID) 24A
Gate to Source Voltage (Vgs) 25V
Drain-source On Resistance-Max 0.119Ohm
Drain to Source Breakdown Voltage 650V
Pulsed Drain Current-Max (IDM) 96A
Avalanche Energy Rating (Eas) 650 mJ
Dimensions
Height 10.75mm
Length 10.4mm
Width 4.6mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
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