DS Breakdown Voltage-Min 600V
Pulsed Drain Current-Max (IDM) 68A
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 17A
Turn-Off Delay Time 73 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V
Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V
Current - Continuous Drain (Id) @ 25°C 17A Tc
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 50V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 190m Ω @ 8A, 10V
Transistor Application SWITCHING
Turn On Delay Time 11.5 ns
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 125W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ