STI18N65M5
RoHS 
RoHS compliant
RoHS compliantPackage TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-Ch 650 V 0.198 Ohm 15 A MDmesh(TM) V
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Buying Options
Total Price: USD $3.65
Unit Price: USD $3.652
≥1 USD $3.652
≥10 USD $2.893088
≥100 USD $2.479752
Inventory: 370
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
Pulsed Drain Current-Max (IDM) 60A
Drain to Source Breakdown Voltage 650V
Drain-source On Resistance-Max 0.22Ohm
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 15A
Turn-Off Delay Time 11 ns
Fall Time (Typ) 9 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 7ns
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Current - Continuous Drain (Id) @ 25°C 15A Tc
Input Capacitance (Ciss) (Max) @ Vds 1240pF @ 100V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 220m Ω @ 7.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 36 ns
Case Connection DRAIN
Power Dissipation 110W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 110W Tc
Number of Elements 1
JESD-30 Code R-PSIP-T3
Base Part Number STI18N
Technology MOSFET (Metal Oxide)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series MDmesh? V
Packaging Tube
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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