STI16N65M5
RoHS 
RoHS compliant
RoHS compliantPackage TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
STMICROELECTRONICS STI16N65M5 Power MOSFET, N Channel, 12 A, 650 V, 0.23 ohm, 10 V, 4 V
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Buying Options
Total Price: USD $3.11
Unit Price: USD $3.1064
≥1 USD $3.1064
≥10 USD $2.463824
≥100 USD $2.111824
≥500 USD $1.877146
Inventory: 999
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tube
Series MDmesh? V
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Base Part Number STI16N
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 90W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 25W
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 279m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1250pF @ 100V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Rise Time 7ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 6 ns
Continuous Drain Current (ID) 12A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.279Ohm
Drain to Source Breakdown Voltage 650V
Pulsed Drain Current-Max (IDM) 48A
Avalanche Energy Rating (Eas) 200 mJ
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Alternative Model
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