Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 110A
Turn-Off Delay Time 72 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 117nC @ 10V
Current - Continuous Drain (Id) @ 25°C 110A Tc
Input Capacitance (Ciss) (Max) @ Vds 8115pF @ 50V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Rds On (Max) @ Id, Vgs 4.2m Ω @ 55A, 10V
Element Configuration Single
Power Dissipation-Max 250W Tc
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ