Avalanche Energy Rating (Eas) 400 mJ
Pulsed Drain Current-Max (IDM) 44A
Drain to Source Breakdown Voltage 800V
Drain-source On Resistance-Max 0.4Ohm
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 11A
Turn-Off Delay Time 46 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 43.6nC @ 10V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Input Capacitance (Ciss) (Max) @ Vds 1630pF @ 25V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 400m Ω @ 5.5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 150W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature ULTRA-LOW RESISTANCE
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Operating Temperature -65°C~150°C TJ