STI10N62K3
RoHS 
RoHS compliant
RoHS compliantPackage TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 620V 8.4A I2PAK
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Buying Options
Total Price: USD $1.84
Unit Price: USD $1.8392
≥1 USD $1.8392
≥10 USD $1.47664
≥100 USD $1.214928
≥500 USD $1.028034
Inventory: 894
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 4.6mm
Length 10.4mm
Height 10.75mm
Technical
Avalanche Energy Rating (Eas) 220 mJ
DS Breakdown Voltage-Min 620V
Drain-source On Resistance-Max 0.75Ohm
Gate to Source Voltage (Vgs) 30V
Threshold Voltage 3.75V
Continuous Drain Current (ID) 8.4A
Turn-Off Delay Time 41 ns
Fall Time (Typ) 31 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 620V
Rise Time 15ns
Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
Current - Continuous Drain (Id) @ 25°C 8.4A Tc
Input Capacitance (Ciss) (Max) @ Vds 1250pF @ 50V
Vgs(th) (Max) @ Id 4.5V @ 100μA
Rds On (Max) @ Id, Vgs 750m Ω @ 4A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 14.5 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 125W Tc
Number of Elements 1
Pin Count 3
Base Part Number STI10N
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series SuperMESH3?
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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