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STH80N10F7-2

STMicroelectronics
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 80A H2PAK-2
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Buying Options
Total Price: USD $2.21
Unit Price: USD $2.21255
≥1 USD $2.21255
≥10 USD $1.81545
≥100 USD $1.75845
≥500 USD $1.70145
≥1000 USD $1.6454
Inventory: 1549
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 37 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 3.949996g
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Cut Tape (CT)
Series DeepGATE?, STripFET? VII
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional Feature ULTRA LOW-ON RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Base Part Number STH80N
Number of Elements 2
Number of Channels 1
Power Dissipation-Max 110W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 110W
Case Connection DRAIN
Turn On Delay Time 19 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.5m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3100pF @ 50V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Rise Time 32 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 36 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0095Ohm
Drain to Source Breakdown Voltage 100V

Dimensions

Height 4.8mm
Length 10.4mm
Width 9.17mm

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

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