STH320N4F6-6
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-7, D2Pak (6 Leads + Tab)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
In a Pack of 5, N-Channel MOSFET, 200 A, 40 V, 8-Pin H2PAK STMicroelectronics STH320N4F6-6
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Buying Options
Total Price: USD $4.18
Unit Price: USD $4.18
≥1 USD $4.18
≥10 USD $3.50768
≥100 USD $2.837824
≥500 USD $2.522485
Inventory: 1023
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 20 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab)
Number of Pins 8
Technical
Operating Temperature -55°C~175°C TJ
Packaging Cut Tape (CT)
Series Automotive, AEC-Q101, DeepGATE?, STripFET? VI
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Base Part Number STH320
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Power Dissipation 300W
Turn On Delay Time 28 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.3m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 13800pF @ 15V
Current - Continuous Drain (Id) @ 25°C 200A Tc
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Rise Time 98ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 95 ns
Turn-Off Delay Time 190 ns
Continuous Drain Current (ID) 200A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Dimensions
Height 4.8mm
Length 15.25mm
Width 10.4mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Alternative Model
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