Drain to Source Breakdown Voltage 100V
Drain-source On Resistance-Max 0.0025Ohm
Drain Current-Max (Abs) (ID) 120A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 180A
Turn-Off Delay Time 148 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Current - Continuous Drain (Id) @ 25°C 180A Tc
Input Capacitance (Ciss) (Max) @ Vds 12800pF @ 25V
Vgs(th) (Max) @ Id 3.8V @ 250μA
Rds On (Max) @ Id, Vgs 2.5m Ω @ 60A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 315W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature ULTRA LOW RESISTANCE
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series DeepGATE?, STripFET? VII
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ