STH310N10F7-2
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 180A H2PAK-2
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Buying Options
Total Price: USD $5.07
Unit Price: USD $5.0688
≥1 USD $5.0688
≥10 USD $4.25568
≥100 USD $3.442736
≥500 USD $3.060182
Inventory: 7223
Minimum: 1
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Technical Details
Supply Chain
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series DeepGATE?, STripFET? VII
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 2.3mOhm
Additional Feature ULTRA LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Base Part Number STH310
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 315W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 315W
Case Connection DRAIN
Turn On Delay Time 62 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.5m Ω @ 60A, 10V
Vgs(th) (Max) @ Id 3.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 12800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 180A Tc
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Rise Time 108 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 148 ns
Continuous Drain Current (ID) 180A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 720A
Dimensions
Height 4.8mm
Length 15.8mm
Width 10.4mm
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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