STH290N4F6-6
RoHS 
RoHS compliant
RoHS compliantPackage /
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V H2PAK-6
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Power Dissipation-Max (Abs) 300W
FET Technology METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min 40V
Pulsed Drain Current-Max (IDM) 720A
Drain-source On Resistance-Max 0.0017Ohm
Drain Current-Max (Abs) (ID) 180A
Polarity/Channel Type N-CHANNEL
Transistor Application SWITCHING
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Operating Temperature (Min) -55°C
Operating Temperature (Max) 175°C
JESD-30 Code R-PSSO-G6
Reference Standard AEC-Q101
Base Part Number STH290
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Terminal Position SINGLE
ECCN Code EAR99
Number of Terminations 6
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Tape & Reel (TR)
Physical
Transistor Element Material SILICON
Surface Mount YES
Alternative Model
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