DS Breakdown Voltage-Min 75V
Pulsed Drain Current-Max (IDM) 720A
Drain-source On Resistance-Max 0.003Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 180A
Turn-Off Delay Time 100 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 75V
Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V
Current - Continuous Drain (Id) @ 25°C 180A Tc
Input Capacitance (Ciss) (Max) @ Vds 6800pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 3m Ω @ 90A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 300W Tc
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series Automotive, AEC-Q101, STripFET? F3
Operating Temperature -55°C~175°C TJ