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STH150N10F7-2

STMicroelectronics
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET POWER MOSFET
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Buying Options
Total Price: USD $3.24
Unit Price: USD $3.2384
≥1 USD $3.2384
≥10 USD $2.7192
≥100 USD $2.199824
≥500 USD $1.95536
Inventory: 1027
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 37 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 3.949996g

Technical

Operating Temperature -55°C~175°C TJ
Packaging Cut Tape (CT)
Series DeepGATE?, STripFET? VII
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STH150
Number of Channels 1
Power Dissipation-Max 250W Tc
Element Configuration Single
Turn On Delay Time 33 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.9m Ω @ 55A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 8115pF @ 50V
Current - Continuous Drain (Id) @ 25°C 110A Tc
Gate Charge (Qg) (Max) @ Vgs 117nC @ 10V
Rise Time 57ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 33 ns
Turn-Off Delay Time 72 ns
Continuous Drain Current (ID) 110A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V

Dimensions

Height 4.8mm
Length 10.4mm
Width 10.57mm

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

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