STFW6N120K3
RoHS 
RoHS compliant
RoHS compliantPackage ISOWATT218FX
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 1.2KV 6A 3-Pin(3+Tab) TO-220FP Tube
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Buying Options
Total Price: USD $41.47
Unit Price: USD $41.47415
≥1 USD $41.47415
≥10 USD $34.02995
≥100 USD $32.9669
≥500 USD $31.90385
≥1000 USD $30.83985
Inventory: 1614
Minimum: 1
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Technical Details
Physical
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case ISOWATT218FX
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series SuperMESH3?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 2.4Ohm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STFW
Pin Count 3
Number of Elements 1
Power Dissipation-Max 63W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 150W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.4 Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id 5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1050pF @ 100V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
Rise Time 12ns
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 32 ns
Turn-Off Delay Time 58 ns
Continuous Drain Current (ID) 6A
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 6A
Drain to Source Breakdown Voltage 1.2kV
Pulsed Drain Current-Max (IDM) 20A
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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