STFW3N170
RoHS 
RoHS compliant
RoHS compliantPackage ISOWATT218FX
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 1700V 2.6A
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Buying Options
Total Price: USD $5.21
Unit Price: USD $5.2096
≥1 USD $5.2096
≥10 USD $4.12955
≥100 USD $3.53951
≥500 USD $3.146211
≥1000 USD $2.693935
≥3000 USD $2.536635
Inventory: 823
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case ISOWATT218FX
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PowerMESH?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Base Part Number STFW
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 63W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13 Ω @ 1.3A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 100V
Current - Continuous Drain (Id) @ 25°C 2.6A Tc
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Drain to Source Voltage (Vdss) 1700V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 2.6A
Drain Current-Max (Abs) (ID) 2.3A
Pulsed Drain Current-Max (IDM) 10.4A
DS Breakdown Voltage-Min 1700V
Avalanche Energy Rating (Eas) 2 mJ
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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