STFW38N65M5
RoHS 
RoHS compliant
RoHS compliantPackage ISOWATT218FX
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 650V 30A TO-3PF
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Buying Options
Total Price: USD $2.15
Unit Price: USD $2.14795
≥1 USD $2.14795
≥10 USD $1.7632
≥100 USD $1.7081
≥500 USD $1.653
≥1000 USD $1.5979
Inventory: 1160
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case ISOWATT218FX
Number of Pins 3
Weight 6.961991g
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tube
Series MDmesh? V
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature ULTRA LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STFW
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 57W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 95m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3000pF @ 100V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 71nC @ 10V
Rise Time 9ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 9 ns
Continuous Drain Current (ID) 30A
Gate to Source Voltage (Vgs) 25V
Drain-source On Resistance-Max 0.095Ohm
Drain to Source Breakdown Voltage 650V
Avalanche Energy Rating (Eas) 660 mJ
Dimensions
Height 26.7mm
Length 15.7mm
Width 5.7mm
Compliance
RoHS Status ROHS3 Compliant
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