Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 35W Tc
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 450m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 870pF @ 100V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain Current-Max (Abs) (ID) 12A
Drain-source On Resistance-Max 0.45Ohm
Pulsed Drain Current-Max (IDM) 48A
DS Breakdown Voltage-Min 800V
Avalanche Energy Rating (Eas) 148 mJ