STFILED524
RoHS 
RoHS compliant
RoHS compliantPackage TO-262-3 Full Pack, I2Pak
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 525V 4A I2PAK
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
Avalanche Energy Rating (Eas) 110 mJ
DS Breakdown Voltage-Min 525V
Drain Current-Max (Abs) (ID) 4A
Gate to Source Voltage (Vgs) 30V
JEDEC-95 Code TO-281
Continuous Drain Current (ID) 4A
Turn-Off Delay Time 21 ns
Fall Time (Typ) 14 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 525V
Rise Time 7ns
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Current - Continuous Drain (Id) @ 25°C 4A Tc
Input Capacitance (Ciss) (Max) @ Vds 340pF @ 100V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Rds On (Max) @ Id, Vgs 2.6 Ω @ 2.2A, 10V
FET Type N-Channel
Turn On Delay Time 8 ns
Case Connection ISOLATED
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 20W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Base Part Number STFILE
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-262-3 Full Pack, I2Pak
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 42 Weeks
Alternative Model
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