Drain to Source Breakdown Voltage 620V
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 3.8A
Turn-Off Delay Time 29 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Current - Continuous Drain (Id) @ 25°C 3.8A Tc
Input Capacitance (Ciss) (Max) @ Vds 550pF @ 50V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Rds On (Max) @ Id, Vgs 2 Ω @ 1.9A, 10V
Element Configuration Single
Power Dissipation-Max 25W Tc
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 150°C TJ