STFI13NM60N
RoHS 
RoHS compliant
RoHS compliantPackage TO-262-3 Full Pack, I2Pak
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 11A I2PAK FP
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Buying Options
Total Price: USD $0.89
Unit Price: USD $0.8854
≥1 USD $0.8854
≥10 USD $0.72675
≥100 USD $0.70395
≥500 USD $0.68115
≥1000 USD $0.65835
Inventory: 6841
Minimum: 1
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Technical Details
Technical
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series MDmesh? II
Packaging Tube
Operating Temperature 150°C TJ
Avalanche Energy Rating (Eas) 220 mJ
Pulsed Drain Current-Max (IDM) 44A
Drain to Source Breakdown Voltage 600V
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 11A
Turn-Off Delay Time 30 ns
Fall Time (Typ) 10 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 8ns
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Input Capacitance (Ciss) (Max) @ Vds 790pF @ 50V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 360m Ω @ 5.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 3 ns
Case Connection ISOLATED
Power Dissipation 25W
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 25W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Pin Count 3
Base Part Number STFI13N
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
ECCN Code EAR99
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-262-3 Full Pack, I2Pak
Mounting Type Through Hole
Mount Through Hole
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Alternative Model
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