Drain to Source Breakdown Voltage 100V
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 40A
Turn-Off Delay Time 75 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Current - Continuous Drain (Id) @ 25°C 40A Tc
Input Capacitance (Ciss) (Max) @ Vds 3100pF @ 50V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Rds On (Max) @ Id, Vgs 10m Ω @ 40A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 30W Tc
Technology MOSFET (Metal Oxide)
Additional Feature ULTRA LOW-ON RESISTANCE
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series DeepGATE?, STripFET? VII
Operating Temperature -55°C~175°C TJ