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RoHS
RoHS RoHS compliant
Package TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 500V 5A TO-220FP
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC

Technical

Nominal Vgs 3 V
Avalanche Energy Rating (Eas) 100 mJ
Dual Supply Voltage 500V
Pulsed Drain Current-Max (IDM) 20A
Drain to Source Breakdown Voltage 500V
Drain Current-Max (Abs) (ID) 5A
Gate to Source Voltage (Vgs) 25V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 2.5A
Turn-Off Delay Time 40 ns
Fall Time (Typ) 9 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 5ns
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Current - Continuous Drain (Id) @ 25°C 5A Tc
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 50V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 780m Ω @ 2.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection ISOLATED
Power Dissipation 20W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 20W Tc
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Base Part Number STF7N
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Resistance 780mOhm
ECCN Code EAR99
Termination Through Hole
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series MDmesh? II
Packaging Tube
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3 Full Pack
Mounting Type Through Hole
Mount Through Hole

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