Drain to Source Breakdown Voltage 650V
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 5.4A
Turn-Off Delay Time 54 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Current - Continuous Drain (Id) @ 25°C 5.4A Tc
Input Capacitance (Ciss) (Max) @ Vds 880pF @ 50V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Rds On (Max) @ Id, Vgs 1.3 Ω @ 2.8A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 30W Tc
Technology MOSFET (Metal Oxide)
Additional Feature ULTRA LOW-ON RESISTANCE
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 150°C TJ