DS Breakdown Voltage-Min 525V
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 4.4A
Turn-Off Delay Time 23.1 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 525V
Gate Charge (Qg) (Max) @ Vgs 16.9nC @ 10V
Current - Continuous Drain (Id) @ 25°C 4.4A Tc
Input Capacitance (Ciss) (Max) @ Vds 529pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Rds On (Max) @ Id, Vgs 1.5 Ω @ 2.2A, 10V
Transistor Application SWITCHING
Turn On Delay Time 11.4 ns
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 25W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn) - annealed
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ