Avalanche Energy Rating (Eas) 120 mJ
Pulsed Drain Current-Max (IDM) 12A
Drain to Source Breakdown Voltage 500V
Drain Current-Max (Abs) (ID) 3A
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 3A
Turn-Off Delay Time 23 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Current - Continuous Drain (Id) @ 25°C 3A Tc
Input Capacitance (Ciss) (Max) @ Vds 310pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Rds On (Max) @ Id, Vgs 2.7 Ω @ 1.5A, 10V
Transistor Application SWITCHING
Turn On Delay Time 9.5 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 20W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ