Operating Temperature 150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Feature ULTRA LOW RESISTANCE
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 40W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 79.5 ns
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 78m Ω @ 19.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3375pF @ 100V
Current - Continuous Drain (Id) @ 25°C 35A Tc
Gate Charge (Qg) (Max) @ Vgs 91nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 79.5 ns
Continuous Drain Current (ID) 35A
Gate to Source Voltage (Vgs) 25V
Drain-source On Resistance-Max 0.078Ohm
Drain to Source Breakdown Voltage 650V
Pulsed Drain Current-Max (IDM) 140A
Avalanche Energy Rating (Eas) 810 mJ