Drain to Source Breakdown Voltage 1kV
Drain-source On Resistance-Max 6Ohm
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 2.5A
Turn-Off Delay Time 39 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 1000V
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Current - Continuous Drain (Id) @ 25°C 2.5A Tc
Input Capacitance (Ciss) (Max) @ Vds 601pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Rds On (Max) @ Id, Vgs 6 Ω @ 1.25A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 25W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ