STF30N65M5
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 650V 22A TO-220FP
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Buying Options
Total Price: USD $4.31
Unit Price: USD $4.3054
≥1 USD $4.3054
≥10 USD $3.5321
≥100 USD $3.4219
≥500 USD $3.3117
≥1000 USD $3.2015
Inventory: 1368
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Dimensions
Width 4.6mm
Length 10.4mm
Height 16.4mm
Technical
Avalanche Energy Rating (Eas) 500 mJ
Pulsed Drain Current-Max (IDM) 88A
Drain to Source Breakdown Voltage 650V
Gate to Source Voltage (Vgs) 25V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 22A
Turn-Off Delay Time 50 ns
Fall Time (Typ) 10 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 8 ns
Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V
Current - Continuous Drain (Id) @ 25°C 22A Tc
Input Capacitance (Ciss) (Max) @ Vds 2880pF @ 100V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 139m Ω @ 11A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 50 ns
Case Connection ISOLATED
Power Dissipation 30W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 30W Tc
Number of Elements 1
Pin Count 3
Base Part Number STF30N
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE ENERGY RATED
Terminal Finish Matte Tin (Sn) - annealed
Resistance 139MOhm
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Series MDmesh? V
Packaging Tube
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3 Full Pack
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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