Operating Temperature 150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 35W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 23.5 ns
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 150m Ω @ 11.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2090pF @ 100V
Current - Continuous Drain (Id) @ 25°C 23A Tc
Gate Charge (Qg) (Max) @ Vgs 62.5nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 92 ns
Continuous Drain Current (ID) 23A
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 650V
Pulsed Drain Current-Max (IDM) 92A
Avalanche Energy Rating (Eas) 50 mJ