Avalanche Energy Rating (Eas) 760 mJ
DS Breakdown Voltage-Min 650V
Pulsed Drain Current-Max (IDM) 80A
Drain-source On Resistance-Max 0.18Ohm
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 20A
Turn-Off Delay Time 59 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 650V
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Input Capacitance (Ciss) (Max) @ Vds 1440pF @ 100V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 180m Ω @ 10A, 10V
Transistor Application SWITCHING
Turn On Delay Time 13.4 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 30W Tc
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 150°C TJ