Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) Not Applicable
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 35W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 175m Ω @ 10.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1817pF @ 100V
Current - Continuous Drain (Id) @ 25°C 21A Tc
Gate Charge (Qg) (Max) @ Vgs 54.6nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 69 ns
Continuous Drain Current (ID) 21A
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 84A