Rds On (Max) @ Id, Vgs 330m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 770pF @ 100V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 46 ns
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 25V
Power Dissipation-Max 25W Tc
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ