Avalanche Energy Rating (Eas) 250 mJ
DS Breakdown Voltage-Min 500V
Pulsed Drain Current-Max (IDM) 60A
Drain-source On Resistance-Max 0.52Ohm
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 15A
Turn-Off Delay Time 21 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 500V
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Current - Continuous Drain (Id) @ 25°C 15A Tc
Input Capacitance (Ciss) (Max) @ Vds 1950pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 100μA
Rds On (Max) @ Id, Vgs 520m Ω @ 5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 30W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn) - annealed
Moisture Sensitivity Level (MSL) Not Applicable
Operating Temperature 150°C TJ