Pulsed Drain Current-Max (IDM) 48A
Drain to Source Breakdown Voltage 500V
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 12A
Turn-Off Delay Time 42 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Input Capacitance (Ciss) (Max) @ Vds 816pF @ 50V
Vgs(th) (Max) @ Id 4V @ 100μA
Rds On (Max) @ Id, Vgs 320m Ω @ 6A, 10V
Transistor Application SWITCHING
Turn On Delay Time 10.2 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 25W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn) - annealed
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ