Drain to Source Breakdown Voltage 650V
Drain-source On Resistance-Max 0.48Ohm
Drain Current-Max (Abs) (ID) 9A
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 9A
Turn-Off Delay Time 23 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Current - Continuous Drain (Id) @ 25°C 9A Tc
Input Capacitance (Ciss) (Max) @ Vds 644pF @ 100V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 480m Ω @ 4.5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 25W Tc
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 150°C TJ