Avalanche Energy Rating (Eas) 212 mJ
Pulsed Drain Current-Max (IDM) 40A
Drain to Source Breakdown Voltage 650V
Drain-source On Resistance-Max 0.85Ohm
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 11A
Turn-Off Delay Time 44 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Input Capacitance (Ciss) (Max) @ Vds 1180pF @ 50V
Vgs(th) (Max) @ Id 4.5V @ 100μA
Rds On (Max) @ Id, Vgs 850m Ω @ 3.6A, 10V
Transistor Application SWITCHING
Turn On Delay Time 14.5 ns
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 35W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn) - annealed
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ