Avalanche Energy Rating (Eas) 80 mJ
Pulsed Drain Current-Max (IDM) 40A
Drain to Source Breakdown Voltage 60V
Drain-source On Resistance-Max 0.16Ohm
Drain Current-Max (Abs) (ID) 7.2A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 10A
Turn-Off Delay Time 14 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 6.4nC @ 10V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Input Capacitance (Ciss) (Max) @ Vds 340pF @ 48V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 160m Ω @ 5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 20W Tc
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series DeepGATE?, STripFET? VI
Operating Temperature 150°C TJ