STF10NM65N
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 650V 9A 3-Pin(3+Tab) TO-220FP Tube
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Buying Options
Total Price: USD $2.38
Unit Price: USD $2.38165
≥1 USD $2.38165
≥10 USD $1.95415
≥100 USD $1.89335
≥500 USD $1.83255
≥1000 USD $1.77175
Inventory: 1443
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 4.6mm
Length 10.4mm
Height 16.4mm
Technical
Nominal Vgs 3 V
Dual Supply Voltage 650V
Drain to Source Breakdown Voltage 650V
Drain-source On Resistance-Max 0.48Ohm
Drain Current-Max (Abs) (ID) 9A
Gate to Source Voltage (Vgs) 25V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 4.5A
Turn-Off Delay Time 50 ns
Fall Time (Typ) 20 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 8ns
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Current - Continuous Drain (Id) @ 25°C 9A Tc
Input Capacitance (Ciss) (Max) @ Vds 850pF @ 50V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 480m Ω @ 4.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 12 ns
Case Connection ISOLATED
Power Dissipation 25W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 25W Tc
Number of Elements 1
Pin Count 3
Base Part Number STF10N
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn) - annealed
ECCN Code EAR99
Termination Through Hole
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Series MDmesh? II
Packaging Tube
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3 Full Pack
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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