Avalanche Energy Rating (Eas) 122 mJ
DS Breakdown Voltage-Min 950V
Pulsed Drain Current-Max (IDM) 32A
Drain-source On Resistance-Max 0.8Ohm
Drain Current-Max (Abs) (ID) 8A
Continuous Drain Current (ID) 8A
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 950V
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Current - Continuous Drain (Id) @ 25°C 8A Tc
Input Capacitance (Ciss) (Max) @ Vds 630pF @ 100V
Vgs(th) (Max) @ Id 5V @ 100μA
Rds On (Max) @ Id, Vgs 800m Ω @ 4A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 30W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ