STE48NM60
RoHS
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Package ISOTOP
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 650V 48A ISOTOP
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status Non-RoHS Compliant
Technical
Avalanche Energy Rating (Eas) 850 mJ
Pulsed Drain Current-Max (IDM) 192A
Drain-source On Resistance-Max 0.11Ohm
Drain Current-Max (Abs) (ID) 30A
Continuous Drain Current (ID) 48A
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 650V
Rise Time 20ns
Gate Charge (Qg) (Max) @ Vgs 134nC @ 10V
Current - Continuous Drain (Id) @ 25°C 48A Tc
Input Capacitance (Ciss) (Max) @ Vds 3800pF @ 25V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 110m Ω @ 22.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection ISOLATED
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 450W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-XUFM-X4
Pin Count 4
Base Part Number STE48
Current Rating 48A
Terminal Form UNSPECIFIED
Terminal Position UPPER
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 600V
Subcategory FET General Purpose Power
Number of Terminations 4
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series MDmesh?
Packaging Tube
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Package / Case ISOTOP
Mounting Type Chassis Mount
Mount Chassis Mount
Alternative Model
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