Drain to Source Breakdown Voltage 900V
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 40A
Turn-Off Delay Time 450 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 826nC @ 10V
Current - Continuous Drain (Id) @ 25°C 40A Tc
Input Capacitance (Ciss) (Max) @ Vds 25000pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 150μA
Rds On (Max) @ Id, Vgs 180m Ω @ 20A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 600W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Nickel (Ni)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -65°C~150°C TJ