STE26NA90
RoHS
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Package ISOTOP
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 900V 26A ISOTOP
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status Non-RoHS Compliant
Radiation Hardening No
Technical
Avalanche Energy Rating (Eas) 3000 mJ
Drain-source On Resistance-Max 0.3Ohm
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 26A
Fall Time (Typ) 25 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 52ns
Gate Charge (Qg) (Max) @ Vgs 660nC @ 10V
Current - Continuous Drain (Id) @ 25°C 26A Tc
Input Capacitance (Ciss) (Max) @ Vds 1770pF @ 25V
Vgs(th) (Max) @ Id 3.75V @ 1mA
Rds On (Max) @ Id, Vgs 300m Ω @ 13A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 40 ns
Case Connection ISOLATED
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 450W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Pin Count 4
Base Part Number STE26
Current Rating 26A
Terminal Form UNSPECIFIED
Terminal Position UPPER
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 900V
Subcategory FET General Purpose Power
Additional Feature UL RECOGNIZED
ECCN Code EAR99
Number of Terminations 4
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Tube
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 4
Package / Case ISOTOP
Mounting Type Chassis Mount
Mount Chassis Mount, Screw
Alternative Model
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