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STE110NS20FD

STMicroelectronics
RoHS
RoHS RoHS compliant
Package ISOTOP
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 200V 110A ISOTOP
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Technical Details

Compliance

RoHS Status ROHS3 Compliant

Technical

Avalanche Energy Rating (Eas) 750 mJ
Drain to Source Breakdown Voltage 200V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 110A
Turn-Off Delay Time 245 ns
Fall Time (Typ) 140 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 130ns
Gate Charge (Qg) (Max) @ Vgs 504nC @ 10V
Current - Continuous Drain (Id) @ 25°C 110A Tc
Input Capacitance (Ciss) (Max) @ Vds 7900pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 24m Ω @ 50A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection ISOLATED
Power Dissipation 500W
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 500W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
Pin Count 4
Base Part Number STE1
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Current Rating 110A
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 200V
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Nickel (Ni)
ECCN Code EAR99
Number of Terminations 4
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series MESH OVERLAY?
Packaging Tube
Operating Temperature 150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 4
Package / Case ISOTOP
Mounting Type Chassis Mount
Mount Chassis Mount, Screw

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