DS Breakdown Voltage-Min 100V
Pulsed Drain Current-Max (IDM) 280A
Drain-source On Resistance-Max 0.01Ohm
Continuous Drain Current (ID) 70A
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Current - Continuous Drain (Id) @ 25°C 70A Tc
Input Capacitance (Ciss) (Max) @ Vds 3100pF @ 50V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Rds On (Max) @ Id, Vgs 10m Ω @ 40A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 85W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series Automotive, AEC-Q101, STripFET?
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ