STD80N10F7
RoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 70A DPAK
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Buying Options
Total Price: USD $1.56
Unit Price: USD $1.5576
≥1 USD $1.5576
≥10 USD $1.2936
≥100 USD $1.029336
≥500 USD $0.870971
≥1000 USD $0.738998
Inventory: 1113
Minimum: 1
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Technical Details
Supply Chain
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 3.949996g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series DeepGATE?, STripFET? VII
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional Feature ULTRA LOW-ON RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Base Part Number STD80
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 85W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 19 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3100pF @ 50V
Current - Continuous Drain (Id) @ 25°C 70A Tc
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Rise Time 32 ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 36 ns
Continuous Drain Current (ID) 70A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 280A
Dimensions
Height 2.4mm
Length 6.6mm
Width 6.2mm
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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