Avalanche Energy Rating (Eas) 110 mJ
Pulsed Drain Current-Max (IDM) 6.4A
Drain to Source Breakdown Voltage 700V
Drain-source On Resistance-Max 7Ohm
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 1.6A
Turn-Off Delay Time 20 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 11.4nC @ 10V
Current - Continuous Drain (Id) @ 25°C 1.6A Tc
Input Capacitance (Ciss) (Max) @ Vds 280pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Rds On (Max) @ Id, Vgs 7 Ω @ 800mA, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 45W Tc
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Matte Tin (Sn) - annealed
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ