Avalanche Energy Rating (Eas) 50 mJ
Pulsed Drain Current-Max (IDM) 8A
Drain to Source Breakdown Voltage 950V
Drain-source On Resistance-Max 5Ohm
Drain Current-Max (Abs) (ID) 2A
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 2A
Turn-Off Delay Time 20.5 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Current - Continuous Drain (Id) @ 25°C 2A Tc
Input Capacitance (Ciss) (Max) @ Vds 105pF @ 100V
Vgs(th) (Max) @ Id 5V @ 100μA
Rds On (Max) @ Id, Vgs 5 Ω @ 1A, 10V
Transistor Application SWITCHING
Turn On Delay Time 8.5 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 45W Tc
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ