Avalanche Energy Rating (Eas) 450 mJ
Drain-source On Resistance-Max 0.04Ohm
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 25A
Turn-Off Delay Time 58 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 52nC @ 5V
Current - Continuous Drain (Id) @ 25°C 25A Tc
Input Capacitance (Ciss) (Max) @ Vds 1710pF @ 25V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 35m Ω @ 12.5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 100W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Powers
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ